- patented trench mos barrier schottky technology - low power loss, high efficiency - ideal for automated placement - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition symbol unit v rrm v i f(av) a t j = 25c v f t j = 125c v f t j = 25c a t j = 125c ma v dc v r jc o c/w t j o c t stg o c document number: ds_d1401011 version: b14 storage temperature range - 55 to + 150 note1: pulse test with pulse width=300 s, 1% duty cycle TSSA3U45 taiwan semiconductor do-214ac(sma) marking code 3u45 maximum dc reverse voltage 32 typical thermal resistance per diode 20 operating temperature range - 55 to + 150 maximum instantaneous reverse current per diode at rated reverse voltage i r - - 500 - 50 100 a min. typ. max. - 0.42 0.48 v -0.30 maximum instantaneous forward voltage per diode (note 1) i f = 3a maximum average forward rectified current 3 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 50 0.40 mechanical data - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - moisture sensitivity level: level 1, per j-std-020 case: do-214ac(sma) features trench mos barrier schottk y rectifier polarity: indicated by cathode band molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free, rohs compliant terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test. maximum repetitive peak reverse voltage 45 maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) parameter TSSA3U45
note: for TSSA3U45: whole series with green compound (ta=25 o c unless otherwise noted) document number: ds_d1401011 version: b14 green compound code description TSSA3U45 TSSA3U45 e3g g part no. packing code suffix "g" part no. e3 ratings and chatacteristics curves ordering information green compound code package packing packing code green compound example preferred p/n clip sma 7500 / 13" plastic reel TSSA3U45 TSSA3U45 taiwan semiconductor e3 clip sma 1800 / 7" plastic reel e2 0.0001 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c 10 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics 0 1 2 3 4 5 0 25 50 75 100 125 150 tl measured at the cathode band terminal fig.1 forward current derating curve average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics junction temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%)
min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = marking code g = green compound yw = date code f = factory code document number: ds_d1401011 version: b14 0.095 0.215 marking diagram e 3.93 5.45 symbol 2.41 suggested pad layout c d a b1.52 unit (inch) 0.066 0.060 0.155 TSSA3U45 taiwan semiconductor unit (mm) 1.68 package outline dimensions dim. unit (mm) unit (inch)
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